Show Hamamatsu Avalanche Photo Diode 3310035952
This is all the information about APD 3310035952. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3310035952 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3310035952/0901009049 |
| Unit: |
#3218 (barcode 1309030088) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
385 V |
| Dark current: |
35.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
149 |
| Position in Box: |
10 |
| EP1 batch: |
174 |
| EP1 batch after irradiation: |
10413 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.8293052 V T = -25 °C: 350.6428734 V |
| Voltage for Gain 150: |
T = +20 °C: 393.6249594 V T = -25 °C: 357.9743467 V |
| Voltage for Gain 200: |
T = +20 °C: 397.9637357 V T = -25 °C: 362.1049864 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.694720343 V-1 T = -25 °C: 4.71717413 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.304599837 V-1 T = -25 °C: 9.524630107 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.52691741 V-1 T = -25 °C: 15.02297673 V-1 |
| Break-through voltage: |
T = +20 °C: 412.0955664 V T = -25 °C: 376.1398993 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history