Show Hamamatsu Avalanche Photo Diode 3310035942
This is all the information about APD 3310035942. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3310035942 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0810007963/3310035942 |
| Unit: |
#3363 (barcode 1309038725) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B06 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.7 V |
| Dark current: |
18.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
149 |
| Position in Box: |
1 |
| EP1 batch: |
174 |
| EP1 batch after irradiation: |
10413 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.262396 V T = -25 °C: 349.2654247 V |
| Voltage for Gain 150: |
T = +20 °C: 392.0382817 V T = -25 °C: 356.5608579 V |
| Voltage for Gain 200: |
T = +20 °C: 396.381234 V T = -25 °C: 360.6409203 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.508935135 V-1 T = -25 °C: 4.83958309 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.880095121 V-1 T = -25 °C: 9.96922508 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.68157352 V-1 T = -25 °C: 15.91259383 V-1 |
| Break-through voltage: |
T = +20 °C: 411.6482718 V T = -25 °C: 375.7341405 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history