Show Hamamatsu Avalanche Photo Diode 3308035888
This is all the information about APD 3308035888. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3308035888 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F02 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
34.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
148 |
| Position in Box: |
30 |
| EP1 batch: |
173 |
| EP1 batch after irradiation: |
10412 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.3293318 V T = -25 °C: 345.2687175 V |
| Voltage for Gain 150: |
T = +20 °C: 387.027048 V T = -25 °C: 352.4357976 V |
| Voltage for Gain 200: |
T = +20 °C: 391.3575812 V T = -25 °C: 356.470033 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.61342932 V-1 T = -25 °C: 4.983767399 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.036300748 V-1 T = -25 °C: 9.343247969 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.01205907 V-1 T = -25 °C: 16.84930169 V-1 |
| Break-through voltage: |
T = +20 °C: 405.4674947 V T = -25 °C: 370.2922671 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
