Show Hamamatsu Avalanche Photo Diode 3306035811
This is all the information about APD 3306035811. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3306035811 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F10 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
381.6 V |
| Dark current: |
27.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
147 |
| Position in Box: |
37 |
| EP1 batch: |
172 |
| EP1 batch after irradiation: |
10411 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0354221 V T = -25 °C: 347.7568182 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9375064 V T = -25 °C: 355.0245653 V |
| Voltage for Gain 200: |
T = +20 °C: 395.5154689 V T = -25 °C: 359.0973635 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.752878785 V-1 T = -25 °C: 5.273681166 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.177794377 V-1 T = -25 °C: 8.76371098 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69547996 V-1 T = -25 °C: 16.15557307 V-1 |
| Break-through voltage: |
T = +20 °C: 408.2963887 V T = -25 °C: 373.595264 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
