Show Hamamatsu Avalanche Photo Diode 3306035809
This is all the information about APD 3306035809. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3306035809 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
G12 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
383.6 V |
Dark current: |
28.8 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
147 |
Position in Box: |
35 |
EP1 batch: |
172 |
EP1 batch after irradiation: |
10411 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.7167594 V T = -25 °C: 348.9532593 V |
Voltage for Gain 150: |
T = +20 °C: 391.4532413 V T = -25 °C: 356.2584704 V |
Voltage for Gain 200: |
T = +20 °C: 395.7666184 V T = -25 °C: 360.3446782 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.767705147 V-1 T = -25 °C: 5.174530367 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.635072925 V-1 T = -25 °C: 9.327728349 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.99417825 V-1 T = -25 °C: 14.44437469 V-1 |
Break-through voltage: |
T = +20 °C: 410.7215312 V T = -25 °C: 375.0477535 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history