Show Hamamatsu Avalanche Photo Diode 3306035808
This is all the information about APD 3306035808. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3306035808 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
31.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
147 |
| Position in Box: |
34 |
| EP1 batch: |
172 |
| EP1 batch after irradiation: |
10411 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.6437642 V T = -25 °C: 345.1087745 V |
| Voltage for Gain 150: |
T = +20 °C: 385.2540679 V T = -25 °C: 352.3060763 V |
| Voltage for Gain 200: |
T = +20 °C: 389.5255689 V T = -25 °C: 356.3928704 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.557633378 V-1 T = -25 °C: 5.24770394 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.953753848 V-1 T = -25 °C: 9.07573732 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.67873987 V-1 T = -25 °C: 63.81482193 V-1 |
| Break-through voltage: |
T = +20 °C: 404.70928 V T = -25 °C: 369.2430994 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
