Show Hamamatsu Avalanche Photo Diode 3305035779
This is all the information about APD 3305035779. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3305035779 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D08 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
375.1 V |
| Dark current: |
32.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
147 |
| Position in Box: |
13 |
| EP1 batch: |
171 |
| EP1 batch after irradiation: |
10410 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.5968314 V T = -25 °C: 341.9607416 V |
| Voltage for Gain 150: |
T = +20 °C: 383.1715203 V T = -25 °C: 348.8869381 V |
| Voltage for Gain 200: |
T = +20 °C: 387.387722 V T = -25 °C: 352.7799304 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.443610579 V-1 T = -25 °C: 5.314843687 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.081300617 V-1 T = -25 °C: 10.21073209 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 16.0271583 V-1 T = -25 °C: 16.52037283 V-1 |
| Break-through voltage: |
T = +20 °C: 402.0339928 V T = -25 °C: 366.7551492 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
