Show Hamamatsu Avalanche Photo Diode 0807007714
This is all the information about APD 0807007714. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0807007714 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E06 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
379.1 V |
Dark current: |
2.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
363 |
Position in Box: |
13 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10555 |
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Shipment: |
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Grid number: |
91 |
Position in grid: |
3 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
16. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
379.1 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.3472769 V T = -25 °C: 344.3262174 V |
Voltage for Gain 150: |
T = +20 °C: 387.259545 V T = -25 °C: 351.5667677 V |
Voltage for Gain 200: |
T = +20 °C: 391.6444113 V T = -25 °C: 355.6494763 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.473822796 V-1 T = -25 °C: 4.914467302 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.698668515 V-1 T = -25 °C: 9.099178866 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21173271 V-1 T = -25 °C: 16.11131542 V-1 |
Break-through voltage: |
T = +20 °C: 407.5999602 V T = -25 °C: 371.2825789 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history