Show Hamamatsu Avalanche Photo Diode 3304035692
This is all the information about APD 3304035692. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3304035692 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F10 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
382.1 V |
Dark current: |
31.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
146 |
Position in Box: |
15 |
EP1 batch: |
169 |
EP1 batch after irradiation: |
10409 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 381.2292088 V T = -25 °C: 346.7616619 V |
Voltage for Gain 150: |
T = +20 °C: 388.9230062 V T = -25 °C: 353.9504463 V |
Voltage for Gain 200: |
T = +20 °C: 393.2255366 V T = -25 °C: 357.9974657 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.636014098 V-1 T = -25 °C: 5.35750634 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.147797344 V-1 T = -25 °C: 9.59039666 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.29819142 V-1 T = -25 °C: 15.41357664 V-1 |
Break-through voltage: |
T = +20 °C: 407.3857714 V T = -25 °C: 371.789304 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history