Show Hamamatsu Avalanche Photo Diode 0807007707
This is all the information about APD 0807007707. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0807007707 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
387.3 V |
| Dark current: |
3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
298 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10363 |
| |
|
| Shipment: |
|
| Grid number: |
91 |
| Position in grid: |
12 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
16. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
387.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.9522357 V T = -25 °C: 351.3487964 V |
| Voltage for Gain 150: |
T = +20 °C: 394.8494181 V T = -25 °C: 358.8350435 V |
| Voltage for Gain 200: |
T = +20 °C: 399.2438852 V T = -25 °C: 363.0420106 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.55420299 V-1 T = -25 °C: 4.697755688 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.957128349 V-1 T = -25 °C: 9.404578586 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84270198 V-1 T = -25 °C: 14.6572938 V-1 |
| Break-through voltage: |
T = +20 °C: 414.5024482 V T = -25 °C: 378.5175216 V |
| |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history