Show Hamamatsu Avalanche Photo Diode 3302035615
This is all the information about APD 3302035615. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3302035615 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C13 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
390.8 V |
Dark current: |
34 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
145 |
Position in Box: |
21 |
EP1 batch: |
168 |
EP1 batch after irradiation: |
10407 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 391.31826 V T = -25 °C: 355.7134579 V |
Voltage for Gain 150: |
T = +20 °C: 399.0959325 V T = -25 °C: 363.1115178 V |
Voltage for Gain 200: |
T = +20 °C: 403.4169651 V T = -25 °C: 367.264948 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.519207596 V-1 T = -25 °C: 5.013782528 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.920018438 V-1 T = -25 °C: 9.348445999 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.77872571 V-1 T = -25 °C: 14.70649735 V-1 |
Break-through voltage: |
T = +20 °C: 417.3428698 V T = -25 °C: 381.38222 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history