Show Hamamatsu Avalanche Photo Diode 3301035551
This is all the information about APD 3301035551. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3301035551 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G10 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
383.9 V |
Dark current: |
26.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
144 |
Position in Box: |
33 |
EP1 batch: |
167 |
EP1 batch after irradiation: |
10349 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.0441538 V T = -25 °C: 348.6178286 V |
Voltage for Gain 150: |
T = +20 °C: 390.7794036 V T = -25 °C: 355.8322049 V |
Voltage for Gain 200: |
T = +20 °C: 395.0654868 V T = -25 °C: 359.8789441 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.702026317 V-1 T = -25 °C: 4.847987345 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.476142217 V-1 T = -25 °C: 10.03969157 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.99548973 V-1 T = -25 °C: 16.30690715 V-1 |
Break-through voltage: |
T = +20 °C: 409.760318 V T = -25 °C: 374.3811662 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history