Show Hamamatsu Avalanche Photo Diode 3217035497
This is all the information about APD 3217035497. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3217035497 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2414027090/3217035497 |
| Unit: |
#3720 (barcode 1309038534) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
386.4 V |
| Dark current: |
23 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
53 |
| Position in Box: |
46 |
| EP1 batch: |
166 |
| EP1 batch after irradiation: |
10406 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.6041222 V T = -25 °C: 349.9269491 V |
| Voltage for Gain 150: |
T = +20 °C: 393.4554196 V T = -25 °C: 357.4096211 V |
| Voltage for Gain 200: |
T = +20 °C: 397.8016761 V T = -25 °C: 361.6103227 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404608903 V-1 T = -25 °C: 4.905145952 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.610208349 V-1 T = -25 °C: 8.952641974 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.90321864 V-1 T = -25 °C: 15.79942519 V-1 |
| Break-through voltage: |
T = +20 °C: 412.2620249 V T = -25 °C: 376.1171096 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history