Show Hamamatsu Avalanche Photo Diode 3215035416
This is all the information about APD 3215035416. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3215035416 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B06 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.5 V |
| Dark current: |
24.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
142 |
| Position in Box: |
14 |
| EP1 batch: |
164 |
| EP1 batch after irradiation: |
10347 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8628479 V T = -25 °C: 347.3456732 V |
| Voltage for Gain 150: |
T = +20 °C: 390.6647173 V T = -25 °C: 354.7130561 V |
| Voltage for Gain 200: |
T = +20 °C: 394.9743346 V T = -25 °C: 358.8315741 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.683060951 V-1 T = -25 °C: 4.855463358 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.46188592 V-1 T = -25 °C: 9.876906126 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.89421922 V-1 T = -25 °C: 15.84365413 V-1 |
| Break-through voltage: |
T = +20 °C: 409.4948308 V T = -25 °C: 373.2202284 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
