Show Hamamatsu Avalanche Photo Diode 3214035379
This is all the information about APD 3214035379. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3214035379 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3214035379/3105034171 |
| Unit: |
#3729 (barcode 1309037582) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
385.1 V |
| Dark current: |
25.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
141 |
| Position in Box: |
43 |
| EP1 batch: |
164 |
| EP1 batch after irradiation: |
10346 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.7630178 V T = -25 °C: 348.1372378 V |
| Voltage for Gain 150: |
T = +20 °C: 391.6409953 V T = -25 °C: 355.5733587 V |
| Voltage for Gain 200: |
T = +20 °C: 396.0118947 V T = -25 °C: 359.7502087 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.658257558 V-1 T = -25 °C: 4.840784588 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.212227881 V-1 T = -25 °C: 9.75410859 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.37497853 V-1 T = -25 °C: 15.46050348 V-1 |
| Break-through voltage: |
T = +20 °C: 410.8227227 V T = -25 °C: 374.4411672 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history