Show Hamamatsu Avalanche Photo Diode 3212035317
This is all the information about APD 3212035317. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3212035317 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1913021271/3212035317 |
| Unit: |
#3358 (barcode 1309038671) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.2 V |
| Dark current: |
20.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
141 |
| Position in Box: |
2 |
| EP1 batch: |
162 |
| EP1 batch after irradiation: |
10345 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.9891017 V T = -25 °C: 349.1149179 V |
| Voltage for Gain 150: |
T = +20 °C: 392.7650637 V T = -25 °C: 356.4958836 V |
| Voltage for Gain 200: |
T = +20 °C: 397.0744159 V T = -25 °C: 360.611895 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.636712946 V-1 T = -25 °C: 4.878710349 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.295861735 V-1 T = -25 °C: 9.050676805 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57627325 V-1 T = -25 °C: 16.15798943 V-1 |
| Break-through voltage: |
T = +20 °C: 412.5574997 V T = -25 °C: 375.9828022 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history