Show Hamamatsu Avalanche Photo Diode 3211035256
This is all the information about APD 3211035256. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3211035256 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2809031533/3211035256 |
| Unit: |
#3464 (barcode 1309035007) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
19.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
140 |
| Position in Box: |
15 |
| EP1 batch: |
161 |
| EP1 batch after irradiation: |
10344 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.5632864 V T = -25 °C: 344.252051 V |
| Voltage for Gain 150: |
T = +20 °C: 387.448551 V T = -25 °C: 351.5575268 V |
| Voltage for Gain 200: |
T = +20 °C: 391.8299058 V T = -25 °C: 355.6518033 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.428784074 V-1 T = -25 °C: 4.878525062 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.580133874 V-1 T = -25 °C: 9.070455816 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.84091756 V-1 T = -25 °C: 16.26999677 V-1 |
| Break-through voltage: |
T = +20 °C: 407.8457862 V T = -25 °C: 371.1325103 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history