Show Hamamatsu Avalanche Photo Diode 3211035249
This is all the information about APD 3211035249. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3211035249 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3211035249/2704030273 |
| Unit: |
#1790 (barcode 1309019755) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
381.8 V |
| Dark current: |
24 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
140 |
| Position in Box: |
9 |
| EP1 batch: |
161 |
| EP1 batch after irradiation: |
10343 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.1334255 V T = -25 °C: 346.9170258 V |
| Voltage for Gain 150: |
T = +20 °C: 389.9847366 V T = -25 °C: 354.2498901 V |
| Voltage for Gain 200: |
T = +20 °C: 394.3520066 V T = -25 °C: 358.3743374 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550075019 V-1 T = -25 °C: 4.990282504 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.002952057 V-1 T = -25 °C: 9.329463075 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.04102274 V-1 T = -25 °C: 14.68212496 V-1 |
| Break-through voltage: |
T = +20 °C: 409.6739267 V T = -25 °C: 373.2622128 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history