Show Hamamatsu Avalanche Photo Diode 3211035243
This is all the information about APD 3211035243. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3211035243 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1411015915/3211035243 |
| Unit: |
#3109 (barcode 1309034017) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
386 V |
| Dark current: |
19.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
140 |
| Position in Box: |
3 |
| EP1 batch: |
161 |
| EP1 batch after irradiation: |
10343 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.0902168 V T = -25 °C: 350.3604327 V |
| Voltage for Gain 150: |
T = +20 °C: 393.9445475 V T = -25 °C: 357.801861 V |
| Voltage for Gain 200: |
T = +20 °C: 398.3060964 V T = -25 °C: 361.9776531 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.558701508 V-1 T = -25 °C: 4.749882612 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.043339188 V-1 T = -25 °C: 9.570464435 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08365296 V-1 T = -25 °C: 15.19954294 V-1 |
| Break-through voltage: |
T = +20 °C: 413.179681 V T = -25 °C: 376.7603879 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history