Show Hamamatsu Avalanche Photo Diode 3210035207
This is all the information about APD 3210035207. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3210035207 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2907032898/3210035207 |
| Unit: |
#1859 (barcode 1309019076) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.6 V |
| Dark current: |
27.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
139 |
| Position in Box: |
28 |
| EP1 batch: |
160 |
| EP1 batch after irradiation: |
10342 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8712535 V T = -25 °C: 347.8479754 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7486573 V T = -25 °C: 355.1837333 V |
| Voltage for Gain 200: |
T = +20 °C: 395.1254375 V T = -25 °C: 359.3199521 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.63005486 V-1 T = -25 °C: 5.033382903 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.154540439 V-1 T = -25 °C: 9.346231295 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.26684973 V-1 T = -25 °C: 14.71595403 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9170681 V T = -25 °C: 373.7641831 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history