Show Hamamatsu Avalanche Photo Diode 3208035091
This is all the information about APD 3208035091. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3208035091 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3208035091/3113034626 |
| Unit: |
#2188 (barcode 1309023783) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C06 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.1 V |
| Dark current: |
21.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
138 |
| Position in Box: |
13 |
| EP1 batch: |
158 |
| EP1 batch after irradiation: |
10340 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.9503173 V T = -25 °C: 342.1928105 V |
| Voltage for Gain 150: |
T = +20 °C: 384.7809232 V T = -25 °C: 349.4518238 V |
| Voltage for Gain 200: |
T = +20 °C: 389.1511025 V T = -25 °C: 353.5242029 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.634530467 V-1 T = -25 °C: 4.944258404 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.12908332 V-1 T = -25 °C: 9.189037923 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16225285 V-1 T = -25 °C: 16.53600818 V-1 |
| Break-through voltage: |
T = +20 °C: 405.0939999 V T = -25 °C: 368.9708872 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history