Show Hamamatsu Avalanche Photo Diode 3208035067
This is all the information about APD 3208035067. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3208035067 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.9 V |
| Dark current: |
21 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
137 |
| Position in Box: |
44 |
| EP1 batch: |
157 |
| EP1 batch after irradiation: |
10340 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.8788775 V T = -25 °C: 343.2632772 V |
| Voltage for Gain 150: |
T = +20 °C: 385.7148819 V T = -25 °C: 350.5637876 V |
| Voltage for Gain 200: |
T = +20 °C: 390.0815734 V T = -25 °C: 354.6115559 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.668543402 V-1 T = -25 °C: 5.006881495 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.23447755 V-1 T = -25 °C: 9.666287177 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.39744173 V-1 T = -25 °C: 16.16498768 V-1 |
| Break-through voltage: |
T = +20 °C: 406.5480298 V T = -25 °C: 368.9791353 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
