Show Hamamatsu Avalanche Photo Diode 3205034907
This is all the information about APD 3205034907. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3205034907 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E11 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.6 V |
Dark current: |
27.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
135 |
Position in Box: |
32 |
EP1 batch: |
154 |
EP1 batch after irradiation: |
10475 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.8061861 V T = -25 °C: 346.2183828 V |
Voltage for Gain 150: |
T = +20 °C: 389.6315494 V T = -25 °C: 353.5419322 V |
Voltage for Gain 200: |
T = +20 °C: 393.9466733 V T = -25 °C: 357.6766218 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.976337778 V-1 T = -25 °C: 4.905840896 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.730454514 V-1 T = -25 °C: 9.022134057 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16144753 V-1 T = -25 °C: 16.01411896 V-1 |
Break-through voltage: |
T = +20 °C: 409.5765755 V T = -25 °C: 373.0353546 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history