Show Hamamatsu Avalanche Photo Diode 3205034896
This is all the information about APD 3205034896. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3205034896 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2816032084/3205034896 |
| Unit: |
#2168 (barcode 1309020706) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
382.8 V |
| Dark current: |
19.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
135 |
| Position in Box: |
24 |
| EP1 batch: |
153 |
| EP1 batch after irradiation: |
10475 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8626842 V T = -25 °C: 347.2583974 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7335765 V T = -25 °C: 354.5623979 V |
| Voltage for Gain 200: |
T = +20 °C: 395.1069159 V T = -25 °C: 358.6692791 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.755566055 V-1 T = -25 °C: 4.790544519 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.168113421 V-1 T = -25 °C: 9.967443321 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.04478772 V-1 T = -25 °C: 16.0781253 V-1 |
| Break-through voltage: |
T = +20 °C: 410.9819886 V T = -25 °C: 374.0788802 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history