Show Hamamatsu Avalanche Photo Diode 3203034818
This is all the information about APD 3203034818. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3203034818 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F05 |
Break-through voltage: |
402 V |
Voltage for Gain 100 (T=+25°C): |
374.3 V |
Dark current: |
23.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
134 |
Position in Box: |
19 |
EP1 batch: |
151 |
EP1 batch after irradiation: |
10473 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 393.7580618 V T = -25 °C: 326.7826739 V |
Voltage for Gain 150: |
T = +20 °C: 396.4719413 V T = -25 °C: 339.2979561 V |
Voltage for Gain 200: |
T = +20 °C: 397.9089416 V T = -25 °C: 339.6129193 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 11.57397376 V-1 T = -25 °C: 232.8363686 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 28.20646678 V-1 T = -25 °C: 158.7487086 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 47.54360818 V-1 T = -25 °C: 158.7487086 V-1 |
Break-through voltage: |
T = +20 °C: 397.1630362 V T = -25 °C: 365.7617762 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history