Show Hamamatsu Avalanche Photo Diode 3201034758
This is all the information about APD 3201034758. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3201034758 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3201034758/2609029829 |
| Unit: |
#3745 (barcode 1309040650) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
402 V |
| Voltage for Gain 100 (T=+25°C): |
376.1 V |
| Dark current: |
22.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
132 |
| Position in Box: |
25 |
| EP1 batch: |
149 |
| EP1 batch after irradiation: |
10337 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.170808 V T = -25 °C: 340.7911839 V |
| Voltage for Gain 150: |
T = +20 °C: 382.9455504 V T = -25 °C: 347.994629 V |
| Voltage for Gain 200: |
T = +20 °C: 387.2975232 V T = -25 °C: 352.0465209 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.588431338 V-1 T = -25 °C: 5.105549575 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.978866573 V-1 T = -25 °C: 9.63328553 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.76679102 V-1 T = -25 °C: 15.32693393 V-1 |
| Break-through voltage: |
T = +20 °C: 401.7220353 V T = -25 °C: 366.0904256 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history