Show Hamamatsu Avalanche Photo Diode 3116034737
This is all the information about APD 3116034737. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3116034737 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3116034737/2416027187 |
| Unit: |
#3232 (barcode 1309031191) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
377.6 V |
| Dark current: |
15.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
132 |
| Position in Box: |
16 |
| EP1 batch: |
149 |
| EP1 batch after irradiation: |
10337 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.2873299 V T = -25 °C: 342.6235592 V |
| Voltage for Gain 150: |
T = +20 °C: 385.138219 V T = -25 °C: 349.8852851 V |
| Voltage for Gain 200: |
T = +20 °C: 389.5249815 V T = -25 °C: 353.9698293 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.544719414 V-1 T = -25 °C: 4.780622735 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.870386597 V-1 T = -25 °C: 9.76707262 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.5716115 V-1 T = -25 °C: 15.66853127 V-1 |
| Break-through voltage: |
T = +20 °C: 403.8591964 V T = -25 °C: 368.7808232 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history