Show Hamamatsu Avalanche Photo Diode 3110034518
This is all the information about APD 3110034518. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3110034518 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D08 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
374.6 V |
Dark current: |
13.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
129 |
Position in Box: |
8 |
EP1 batch: |
144 |
EP1 batch after irradiation: |
10471 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 375.1864515 V T = -25 °C: 340.6109764 V |
Voltage for Gain 150: |
T = +20 °C: 382.9328553 V T = -25 °C: 347.8042004 V |
Voltage for Gain 200: |
T = +20 °C: 387.3451195 V T = -25 °C: 351.8405285 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.826296989 V-1 T = -25 °C: 4.771559984 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.825433211 V-1 T = -25 °C: 9.932685495 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2035558 V-1 T = -25 °C: 15.84903642 V-1 |
Break-through voltage: |
T = +20 °C: 402.5827913 V T = -25 °C: 366.554678 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history