Show Hamamatsu Avalanche Photo Diode 3110034479
This is all the information about APD 3110034479. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3110034479 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
384.1 V |
| Dark current: |
23.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
128 |
| Position in Box: |
28 |
| EP1 batch: |
143 |
| EP1 batch after irradiation: |
10334 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.7463604 V T = -25 °C: 348.4558154 V |
| Voltage for Gain 150: |
T = +20 °C: 391.6589351 V T = -25 °C: 355.861194 V |
| Voltage for Gain 200: |
T = +20 °C: 396.0430482 V T = -25 °C: 360.0275074 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.655289823 V-1 T = -25 °C: 4.716515857 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.18853501 V-1 T = -25 °C: 9.575700911 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.36570145 V-1 T = -25 °C: 15.10225393 V-1 |
| Break-through voltage: |
T = +20 °C: 411.4261623 V T = -25 °C: 375.2168137 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
