Show Hamamatsu Avalanche Photo Diode 3105034177
This is all the information about APD 3105034177. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3105034177 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3105034177/3101033856 |
| Unit: |
#2475 (barcode 1309023936) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
382.5 V |
| Dark current: |
20 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
124 |
| Position in Box: |
8 |
| EP1 batch: |
135 |
| EP1 batch after irradiation: |
10470 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.3796782 V T = -25 °C: 346.0822006 V |
| Voltage for Gain 150: |
T = +20 °C: 389.1851837 V T = -25 °C: 353.4020314 V |
| Voltage for Gain 200: |
T = +20 °C: 393.5157588 V T = -25 °C: 357.4942941 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.501453127 V-1 T = -25 °C: 4.932215372 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.858977271 V-1 T = -25 °C: 9.190254579 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.57259032 V-1 T = -25 °C: 16.4102216 V-1 |
| Break-through voltage: |
T = +20 °C: 406.8131648 V T = -25 °C: 371.5037492 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history