Show Hamamatsu Avalanche Photo Diode 0805007590
This is all the information about APD 0805007590. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0805007590 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.2 V |
| Dark current: |
3.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
297 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10363 |
| |
|
| Shipment: |
|
| Grid number: |
86 |
| Position in grid: |
2 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
391.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.9905545 V T = -25 °C: 354.9194751 V |
| Voltage for Gain 150: |
T = +20 °C: 398.8340728 V T = -25 °C: 362.4687299 V |
| Voltage for Gain 200: |
T = +20 °C: 403.1779156 V T = -25 °C: 366.6800713 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.591882431 V-1 T = -25 °C: 4.85988894 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.163729155 V-1 T = -25 °C: 8.885793209 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35018314 V-1 T = -25 °C: 15.65429225 V-1 |
| Break-through voltage: |
T = +20 °C: 417.5168741 V T = -25 °C: 381.9083533 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
