Show Hamamatsu Avalanche Photo Diode 3104034096
This is all the information about APD 3104034096. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3104034096 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2811031622/3104034096 |
| Unit: |
#3373 (barcode 1309031504) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
384.3 V |
| Dark current: |
18 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
123 |
| Position in Box: |
5 |
| EP1 batch: |
134 |
| EP1 batch after irradiation: |
10468 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.5516785 V T = -25 °C: 348.3259058 V |
| Voltage for Gain 150: |
T = +20 °C: 391.3853409 V T = -25 °C: 355.7408395 V |
| Voltage for Gain 200: |
T = +20 °C: 395.7358692 V T = -25 °C: 359.8865553 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.486029362 V-1 T = -25 °C: 4.825838932 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.794655315 V-1 T = -25 °C: 9.867612691 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47366954 V-1 T = -25 °C: 15.75601933 V-1 |
| Break-through voltage: |
T = +20 °C: 410.2948641 V T = -25 °C: 374.4677746 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history