Show Hamamatsu Avalanche Photo Diode 3102033912
This is all the information about APD 3102033912. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3102033912 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3102033912/3110034492 |
| Unit: |
#3707 (barcode 1309037124) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
376 V |
| Dark current: |
16.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
120 |
| Position in Box: |
41 |
| EP1 batch: |
130 |
| EP1 batch after irradiation: |
10468 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.6147835 V T = -25 °C: 340.9847732 V |
| Voltage for Gain 150: |
T = +20 °C: 383.3862683 V T = -25 °C: 348.1655129 V |
| Voltage for Gain 200: |
T = +20 °C: 387.7206654 V T = -25 °C: 352.2120164 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.469174312 V-1 T = -25 °C: 5.091390945 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.700539489 V-1 T = -25 °C: 9.580343757 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17714116 V-1 T = -25 °C: 15.25161785 V-1 |
| Break-through voltage: |
T = +20 °C: 403.2127606 V T = -25 °C: 367.1498704 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history