Show Hamamatsu Avalanche Photo Diode 3101033818
This is all the information about APD 3101033818. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3101033818 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G12 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
387.4 V |
| Dark current: |
22.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
119 |
| Position in Box: |
27 |
| EP1 batch: |
128 |
| EP1 batch after irradiation: |
10465 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
02. Oct 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2018 |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.3708346 V T = -25 °C: 351.6638405 V |
| Voltage for Gain 150: |
T = +20 °C: 395.1526702 V T = -25 °C: 359.118849 V |
| Voltage for Gain 200: |
T = +20 °C: 399.4786189 V T = -25 °C: 363.3363419 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.542638525 V-1 T = -25 °C: 4.67488232 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.97916418 V-1 T = -25 °C: 9.294137364 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.85378381 V-1 T = -25 °C: 14.4853575 V-1 |
| Break-through voltage: |
T = +20 °C: 414.1169727 V T = -25 °C: 378.2288973 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history