Show Hamamatsu Avalanche Photo Diode 3009033790
This is all the information about APD 3009033790. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3009033790 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E03 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
388.9 V |
Dark current: |
20.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
119 |
Position in Box: |
20 |
EP1 batch: |
128 |
EP1 batch after irradiation: |
10465 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Sep 2018 |
Sent for analysis after irradiation: |
02. Oct 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Sep 2018 |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
28. Sep 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.955242 V T = -25 °C: 352.8593735 V |
Voltage for Gain 150: |
T = +20 °C: 396.7736478 V T = -25 °C: 360.3545555 V |
Voltage for Gain 200: |
T = +20 °C: 401.1064179 V T = -25 °C: 364.549813 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.674376187 V-1 T = -25 °C: 4.863998711 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.235504798 V-1 T = -25 °C: 8.946837497 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.5409614 V-1 T = -25 °C: 15.68284897 V-1 |
Break-through voltage: |
T = +20 °C: 415.7855305 V T = -25 °C: 379.3745954 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history