Show Hamamatsu Avalanche Photo Diode 3009033749
This is all the information about APD 3009033749. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3009033749 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F08 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.5 V |
| Dark current: |
21.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
419 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10657 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
02. Oct 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2018 |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.3675916 V T = -25 °C: 347.7694527 V |
| Voltage for Gain 150: |
T = +20 °C: 391.1201583 V T = -25 °C: 355.1220881 V |
| Voltage for Gain 200: |
T = +20 °C: 395.435399 V T = -25 °C: 359.2434891 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.542000825 V-1 T = -25 °C: 5.031019195 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.980890052 V-1 T = -25 °C: 9.420092935 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.87218804 V-1 T = -25 °C: 14.88946021 V-1 |
| Break-through voltage: |
T = +20 °C: 410.9687806 V T = -25 °C: 374.6392869 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history