Show Hamamatsu Avalanche Photo Diode 3008033710
This is all the information about APD 3008033710. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3008033710 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2710030793/3008033710 |
| Unit: |
#3810 (barcode 1309037513) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.6 V |
| Dark current: |
22.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
118 |
| Position in Box: |
4 |
| EP1 batch: |
126 |
| EP1 batch after irradiation: |
10463 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.8926536 V T = -25 °C: 353.0857172 V |
| Voltage for Gain 150: |
T = +20 °C: 396.7701872 V T = -25 °C: 360.5951765 V |
| Voltage for Gain 200: |
T = +20 °C: 401.1359508 V T = -25 °C: 364.7535521 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.569808585 V-1 T = -25 °C: 4.87739216 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.131966569 V-1 T = -25 °C: 9.315084455 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.19622663 V-1 T = -25 °C: 15.09960084 V-1 |
| Break-through voltage: |
T = +20 °C: 416.1727814 V T = -25 °C: 379.8613007 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history