Show Hamamatsu Avalanche Photo Diode 3007033669
This is all the information about APD 3007033669. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3007033669 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Bochum |
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|
| Installation information: |
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| Label: |
none |
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|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.6 V |
| Dark current: |
20.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
117 |
| Position in Box: |
26 |
| EP1 batch: |
125 |
| EP1 batch after irradiation: |
10668 |
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| Shipment: |
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| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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| Annealing: |
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| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.4466523 V T = -25 °C: 350.6424272 V |
| Voltage for Gain 150: |
T = +20 °C: 394.3063931 V T = -25 °C: 358.1111037 V |
| Voltage for Gain 200: |
T = +20 °C: 398.6734001 V T = -25 °C: 362.3128346 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.464995209 V-1 T = -25 °C: 4.643998914 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.684131631 V-1 T = -25 °C: 9.290119457 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16661255 V-1 T = -25 °C: 14.53169003 V-1 |
| Break-through voltage: |
T = +20 °C: 413.9793903 V T = -25 °C: 377.5259393 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history