Show Hamamatsu Avalanche Photo Diode 3007033661
This is all the information about APD 3007033661. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3007033661 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Bochum |
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|
| Installation information: |
|
| Label: |
none |
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|
| Manufacturer information: |
|
| Wafer position: |
E05 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
23.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
117 |
| Position in Box: |
19 |
| EP1 batch: |
125 |
| EP1 batch after irradiation: |
10668 |
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|
| Shipment: |
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| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5289821 V T = -25 °C: 347.331642 V |
| Voltage for Gain 150: |
T = +20 °C: 390.3542659 V T = -25 °C: 354.7143637 V |
| Voltage for Gain 200: |
T = +20 °C: 394.7061385 V T = -25 °C: 358.843644 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43175685 V-1 T = -25 °C: 4.776171603 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.683306726 V-1 T = -25 °C: 9.728095099 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.020677 V-1 T = -25 °C: 15.45914192 V-1 |
| Break-through voltage: |
T = +20 °C: 410.0796181 V T = -25 °C: 373.9512224 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
