Show Hamamatsu Avalanche Photo Diode 3006033619
This is all the information about APD 3006033619. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3006033619 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Bochum |
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|
| Installation information: |
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| Label: |
none |
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| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.4 V |
| Dark current: |
24.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
117 |
| Position in Box: |
4 |
| EP1 batch: |
124 |
| EP1 batch after irradiation: |
10667 |
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| Shipment: |
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| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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| Annealing: |
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| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.7525615 V T = -25 °C: 351.2436607 V |
| Voltage for Gain 150: |
T = +20 °C: 394.5931928 V T = -25 °C: 358.7457443 V |
| Voltage for Gain 200: |
T = +20 °C: 398.9196247 V T = -25 °C: 362.9669474 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.687290716 V-1 T = -25 °C: 4.880011493 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.546502243 V-1 T = -25 °C: 9.876603174 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87791441 V-1 T = -25 °C: 15.66184463 V-1 |
| Break-through voltage: |
T = +20 °C: 413.9352192 V T = -25 °C: 377.8883582 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history