Show Hamamatsu Avalanche Photo Diode 3006033609
This is all the information about APD 3006033609. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3006033609 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E11 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
24.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
116 |
| Position in Box: |
46 |
| EP1 batch: |
124 |
| EP1 batch after irradiation: |
10463 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.5816598 V T = -25 °C: 348.5586536 V |
| Voltage for Gain 150: |
T = +20 °C: 391.4416259 V T = -25 °C: 355.9653683 V |
| Voltage for Gain 200: |
T = +20 °C: 395.8094115 V T = -25 °C: 360.0450962 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.40277433 V-1 T = -25 °C: 4.933865607 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.520590481 V-1 T = -25 °C: 10.81271145 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.72396088 V-1 T = -25 °C: 15.10705129 V-1 |
| Break-through voltage: |
T = +20 °C: 411.3318745 V T = -25 °C: 375.5149363 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
