Show Hamamatsu Avalanche Photo Diode 3006033592
This is all the information about APD 3006033592. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3006033592 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3406036815/3006033592 |
| Unit: |
#2047 (barcode 1309020454) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C09 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.6 V |
| Dark current: |
25.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
116 |
| Position in Box: |
31 |
| EP1 batch: |
123 |
| EP1 batch after irradiation: |
10462 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.6112471 V T = -25 °C: 349.9409308 V |
| Voltage for Gain 150: |
T = +20 °C: 393.4438378 V T = -25 °C: 357.391417 V |
| Voltage for Gain 200: |
T = +20 °C: 397.7850228 V T = -25 °C: 361.5560316 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.376428917 V-1 T = -25 °C: 4.889462085 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.602419704 V-1 T = -25 °C: 9.014917801 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.90564056 V-1 T = -25 °C: 15.96507309 V-1 |
| Break-through voltage: |
T = +20 °C: 413.4053001 V T = -25 °C: 376.9943266 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history