Show Hamamatsu Avalanche Photo Diode 3005033482
This is all the information about APD 3005033482. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3005033482 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3003033348/3005033482 |
| Unit: |
#2269 (barcode 1309020270) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382.1 V |
| Dark current: |
19.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
115 |
| Position in Box: |
6 |
| EP1 batch: |
121 |
| EP1 batch after irradiation: |
10460 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6207293 V T = -25 °C: 346.3884844 V |
| Voltage for Gain 150: |
T = +20 °C: 389.4750448 V T = -25 °C: 353.7651336 V |
| Voltage for Gain 200: |
T = +20 °C: 393.8419671 V T = -25 °C: 357.9086085 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.396885693 V-1 T = -25 °C: 4.74797218 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.503054951 V-1 T = -25 °C: 9.659455387 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69148477 V-1 T = -25 °C: 15.28191866 V-1 |
| Break-through voltage: |
T = +20 °C: 408.6602991 V T = -25 °C: 372.6398191 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history