Show Hamamatsu Avalanche Photo Diode 3004033434
This is all the information about APD 3004033434. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3004033434 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E05 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
389 V |
| Dark current: |
23.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
114 |
| Position in Box: |
18 |
| EP1 batch: |
120 |
| EP1 batch after irradiation: |
10459 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.5320971 V T = -25 °C: 353.1283359 V |
| Voltage for Gain 150: |
T = +20 °C: 396.3686366 V T = -25 °C: 360.4419873 V |
| Voltage for Gain 200: |
T = +20 °C: 400.6856068 V T = -25 °C: 364.6772771 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.470379636 V-1 T = -25 °C: 4.672598175 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.6040541 V-1 T = -25 °C: 11.59742239 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.34023026 V-1 T = -25 °C: 18.5303446 V-1 |
| Break-through voltage: |
T = +20 °C: 416.3977464 V T = -25 °C: 378.6144469 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
