Show Hamamatsu Avalanche Photo Diode 3003033346
This is all the information about APD 3003033346. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3003033346 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F02 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
383.2 V |
Dark current: |
23.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
113 |
Position in Box: |
5 |
EP1 batch: |
118 |
EP1 batch after irradiation: |
10457 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.4375735 V T = -25 °C: 348.9238165 V |
Voltage for Gain 150: |
T = +20 °C: 391.3959264 V T = -25 °C: 356.5326437 V |
Voltage for Gain 200: |
T = +20 °C: 395.8330589 V T = -25 °C: 360.4089043 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.407194455 V-1 T = -25 °C: 4.852680766 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.526961129 V-1 T = -25 °C: 8.961710656 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6263195 V-1 T = -25 °C: 16.16817335 V-1 |
Break-through voltage: |
T = +20 °C: 412.9267963 V T = -25 °C: 375.9216902 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history