Show Hamamatsu Avalanche Photo Diode 3002033290
This is all the information about APD 3002033290. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3002033290 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C01 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
392.6 V |
| Dark current: |
21.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
112 |
| Position in Box: |
8 |
| EP1 batch: |
116 |
| EP1 batch after irradiation: |
10267 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.2330417 V T = -25 °C: 356.0528366 V |
| Voltage for Gain 150: |
T = +20 °C: 400.0630575 V T = -25 °C: 363.6201083 V |
| Voltage for Gain 200: |
T = +20 °C: 404.4109089 V T = -25 °C: 367.8283804 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.489043032 V-1 T = -25 °C: 4.80144489 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.948456154 V-1 T = -25 °C: 9.653344954 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.78629234 V-1 T = -25 °C: 15.21809839 V-1 |
| Break-through voltage: |
T = +20 °C: 416.8895903 V T = -25 °C: 381.2228526 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
