Show Hamamatsu Avalanche Photo Diode 2911033209
This is all the information about APD 2911033209. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2911033209 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2911033209/1411015924 |
| Unit: |
#3362 (barcode 1309038718) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
384 V |
| Dark current: |
10.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
111 |
| Position in Box: |
6 |
| EP1 batch: |
115 |
| EP1 batch after irradiation: |
10266 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.6620265 V T = -25 °C: 349.267246 V |
| Voltage for Gain 150: |
T = +20 °C: 392.419369 V T = -25 °C: 356.5895749 V |
| Voltage for Gain 200: |
T = +20 °C: 396.7191324 V T = -25 °C: 360.668912 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427117133 V-1 T = -25 °C: 5.341452381 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.729859808 V-1 T = -25 °C: 9.865322801 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.35293905 V-1 T = -25 °C: 16.45334809 V-1 |
| Break-through voltage: |
T = +20 °C: 411.5114875 V T = -25 °C: 375.338911 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history