Show Hamamatsu Avalanche Photo Diode 2904032702
This is all the information about APD 2904032702. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2904032702 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2904032702/2309024920 |
| Unit: |
#2473 (barcode 1309023912) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.1 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
109 |
| Position in Box: |
38 |
| EP1 batch: |
112 |
| EP1 batch after irradiation: |
10399 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.5885481 V T = -25 °C: 345.9096834 V |
| Voltage for Gain 150: |
T = +20 °C: 389.5335945 V T = -25 °C: 353.2122485 V |
| Voltage for Gain 200: |
T = +20 °C: 393.9389754 V T = -25 °C: 357.4328976 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.671815486 V-1 T = -25 °C: 4.643857728 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.36605775 V-1 T = -25 °C: 10.85003603 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.61241658 V-1 T = -25 °C: 13.74174772 V-1 |
| Break-through voltage: |
T = +20 °C: 410.1737091 V T = -25 °C: 373.0594712 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history