Show Hamamatsu Avalanche Photo Diode 2904032692
This is all the information about APD 2904032692. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2904032692 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2904032692/3004033460 |
| Unit: |
#2949 (barcode 1309025787) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G10 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
387.3 V |
| Dark current: |
8.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
109 |
| Position in Box: |
29 |
| EP1 batch: |
112 |
| EP1 batch after irradiation: |
10398 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.5448856 V T = -25 °C: 350.7491871 V |
| Voltage for Gain 150: |
T = +20 °C: 394.3876152 V T = -25 °C: 358.2461399 V |
| Voltage for Gain 200: |
T = +20 °C: 398.7231584 V T = -25 °C: 362.4453524 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.420168892 V-1 T = -25 °C: 4.928536949 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.624964535 V-1 T = -25 °C: 9.100553086 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00439509 V-1 T = -25 °C: 16.04443016 V-1 |
| Break-through voltage: |
T = +20 °C: 413.3832294 V T = -25 °C: 377.3512356 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history