Show Hamamatsu Avalanche Photo Diode 2903032670
This is all the information about APD 2903032670. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2903032670 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2903032670/2910033098 |
| Unit: |
#2229 (barcode 1309020997) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C06 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.2 V |
| Dark current: |
6.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
109 |
| Position in Box: |
13 |
| EP1 batch: |
111 |
| EP1 batch after irradiation: |
10398 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.7215711 V T = -25 °C: 345.4366287 V |
| Voltage for Gain 150: |
T = +20 °C: 388.5677142 V T = -25 °C: 352.7899165 V |
| Voltage for Gain 200: |
T = +20 °C: 392.923683 V T = -25 °C: 356.9062468 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.724136715 V-1 T = -25 °C: 4.801565969 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.49356033 V-1 T = -25 °C: 9.75684475 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.72296134 V-1 T = -25 °C: 15.56144509 V-1 |
| Break-through voltage: |
T = +20 °C: 408.1722488 V T = -25 °C: 371.8784327 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history